Statistical phonon transport model for multiscale simulation of thermal transport in silicon: Part Ⅰ - Presentation of the model

摘要

The Boltzmann transport equation can be used to model phonon transport in crystalline materials across multiple length scales. The statistical phonon transport model solves the Boltzmann transport equation in a statistical framework that incorporates a state-based phonon transport methodology. The statistical phonon transport model captures the anisotropy of the first Brillouin zone in addition to nonlinear dispersion. Three-phonon scattering is implemented conserving both energy and pseudo-momentum with probability limits based exclusively on the relative phonon populations available.