A study on indium arsenide-based Schottky barrier diodes.

摘要

The InAs/GaP semiconductor-semiconductor Schottky devices showed superior thermal stability to that of the Au/Ti GaP metal-semiconductor Schottky devices. Furthermore, InAs/GaP heterointerface is thought to be a blocking barrier against dopant diffusion at high temperature, which could be very useful for device application and give various choices in device processing. Results of the characterization studies on the InAs/GaP heterojunction have also been demonstrated. Differential Hall measurement technique verified the existence of sheet carrier concentration at the InAs/GaP heterointerface even though the concentrations were different sample by sample.