PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICES WITH SCHOTTKY BARRIER ON INDIUM PHOSPHIDE

摘要

FIELD: semiconductor technology. SUBSTANCE: in compliance with invention chemical treatment of plates of indium phosphide is performed in concentrated hydrofluoric acid at temperature from 80 up to 160 C. Treatment lasts for not less than 5 min and leads to formation of adsorbed ions of fluoride on surface of semiconductor. Important feature of invention consists in deposition of metal after interval of less than 60 min after treatment. For this purpose plates of indium phosphide are heated to temperatures exceeding 120 C, fluoride volatilizes from surface and nonactive metal is sprayed. EFFECT: increased breakdown voltages thanks to growth of height of Schottky barrier. 1 tbl