Indium phosphide substrate, semiconductor epitaxial wafer, and manufacturing method of indium phosphide substrate

摘要

Problem to be solved: to provide a method of manufacturing an indium phosphide substrate, a semiconductor epitaxial wafer and an indium phosphide substrate in which the warpage of the back surface of the substrate is suppressed well.Solution: an indium phosphide substrate having a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, measured on the back side of the phosphide indium phosphide substrate μ An indium phosphide substrate characterized by being M.No selection