Indium phosphide substrate, semiconductor epitaxial wafer, and manufacturing method of indium phosphide substrate

摘要

Problem to be solved: to provide a method of manufacturing an indium phosphide substrate, a semiconductor epitaxial wafer and an indium phosphide substrate in which the warpage of the back surface of the substrate is suppressed well.Solution: a phosphorous indium phosphide substrate having a main surface for forming an epitaxial crystal layer and a back surface opposite the main surface, measured with the back surface of the phosphide indium phosphide substrate, the warp value on the backside measured 3.5 μ An indium phosphide substrate characterized in that it is less than or equal to M.No selection