Analysis of schottky barrier indium arsenide nanowire MOSFET for high frequency application

摘要

InAs Schottky barrier gate all around MOSFET has been studied. Its electrical characteristics has been studied by simulating the device in a multiphysics simulation software. A 2D device was simulated, because of the symmetry of a cylinder and later extruded into a 3D structure to get appropriate results. The device parameters such as band diagram, current characteristics and small signal parameters such as drain conductance and transconductance have been studied by varying the drain and gate voltages.