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Helix -type compliant off -chip interconnect for microelectronic packaging.

机译:用于微电子封装的符合Helix类型的片外互连。

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摘要

The rapid advances in IC design and fabrication continue to challenge and push the microelectronic packaging industry in size, performance, cost, and reliability. The minimum feature size in IC components will reach the scale of 9 nm by the year of 2016 according to International Technology Roadmap for Semiconductors (ITRS) 2002, requiring the area-array off-chip interconnect pitch to be 50 gym. Under this fine pitch, not many off-chip interconnects can meet the requirements of reliability, performance, cost, and manufacturability. This bottleneck will limit the future progress of microelectronic industry. A new technology, which is called helix-type compliant off-chip interconnect, has been designed and developed to address some of the limitations with current off-chip interconnects. This research work covers full range of design, optimization, fabrication, assembly and reliability assessment of the novel interconnect technology through analytical, numerical and experimental investigations.;Two kinds of helix-type compliant interconnects, beta-helix and G-helix, have been designed for different applications. The fabrication of the helix-type compliant interconnects is based on the lithography, electroplating and molding (LIGA-like) technologies, and this fabrication can be integrated into wafer-level fine-pitch batch processing. The helix-type off-chip interconnects are expected to have good mechanical compliance in the three orthogonal directions and can accommodate the differential displacement induced by the coefficient of thermal expansion (CTE) mismatch between the silicon die and the organic substrate. The geometry effects on the mechanical compliance and electrical parasitics have been studied analytically and numerically. However, it is found that the helix-type interconnect with excellent mechanical compliance may not have good electrical performance. Therefore, a trade off is needed. Using response surface methodology (RSM), optimization has been done. Moreover, physics-based predictive reliability models have been built to evaluate the effect of package weight on the free-standing compliant interconnect and the then-no-mechanical reliability. The heat removal capability of the helix-type compliant interconnect has also be studied. Finally a comprehensive design guideline for compliant off-chip interconnects has been established according to fabrication, design, optimization and thermo-mechanical-electrical analysis results.
机译:IC设计和制造的飞速发展继续挑战并推动着微电子封装行业的规模,性能,成本和可靠性。根据2002年国际半导体技术路线图(ITRS),到2016年,IC组件的最小特征尺寸将达到9 nm,要求面积阵列片外互连间距为50毫米。在这种微小的间距下,很少有片外互连可以满足可靠性,性能,成本和可制造性的要求。这个瓶颈将限制微电子产业的未来发展。已经设计和开发了一种新技术,称为符合螺旋类型的片外互连,以解决当前片外互连的一些限制。这项研究工作包括通过分析,数值和实验研究,对新型互连技术进行全方位的设计,优化,制造,组装和可靠性评估。;已经开发出两种螺旋型兼容互连,即β-螺旋和G-螺旋。为不同的应用设计螺旋型兼容互连的制造基于光刻,电镀和成型(类似LIGA)技术,并且该制造可集成到晶圆级细间距批处理中。螺旋型片外互连有望在三个正交方向上具有良好的机械顺应性,并且可以适应由硅芯片和有机基板之间的热膨胀系数(CTE)不匹配引起的差分位移。几何形状对机械柔度和电气寄生效应的影响已通过分析和数值研究。然而,发现具有优异的机械柔韧性的螺旋型互连可能不具有良好的电性能。因此,需要权衡。使用响应面方法(RSM),已经完成了优化。此外,已经建立了基于物理学的预测可靠性模型,以评估封装重量对独立柔性互连和当时没有机械可靠性的影响。还研究了螺旋型兼容互连的散热能力。最终,根据制造,设计,优化和热机械电分析结果,建立了适用于片外互连的综合设计指南。

著录项

  • 作者

    Zhu, Qi.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Mechanical.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 245 p.
  • 总页数 245
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:45:52

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