Of the many challenges which are threatening to derail the success trend set by Moore's Law, perhaps the most prominent one is the "Interconnect Bottleneck". The metallic interconnections which carry inter-chip and intra-chip signals are increasingly proving to be inadequate to carry the enormous amount of data due to band-width limitations, cross talk and increased latency. A silicon based optical interconnect is showing enormous promise to address this issue in a cost effective manner by leveraging the extremely matured CMOS fabrication infrastructure. An optical interconnect system consists of a low loss waveguide, modulator, photo detector and a light source. Of these the only component yet to be demonstrated in silicon is a CMOS compatible electrically pumped silicon based laser.;The present work is our endeavor towards the goal of a practical light source in silicon. To this end we have focused our efforts on horizontal slot waveguide which consists of a nm thin low index silica layer sandwiched between two high index silicon layers. Such a structure provides an exceptionally high confinement for the TM-like mode in the thin silica slot. The shallow ridge profile of the waveguide allows in principle for lateral electrical access to the core of the waveguide for excitation of the slot embedded gain material like erbium or nano-crystal sensitized erbium using tunneling, polarization transfer or transport.;Low losses in the proposed structure are paramount due to the low gain expectation (∼1dB/cm) from CMOS compatible gain media. This dissertation details the novel techniques conceived to mitigate the severe lateral radiation leakage loss of the TM-like mode in these waveguides and resonators using "Magic Widths" and "Magic Radii" designs. New fabrication techniques are discussed which were developed to achieve ultra-smooth waveguide surfaces to substantially reduce the scattering induced losses in the Silicon-on-Insulator (SOI) high index contrast system. This enabled us to achieve resonators with Qs of 1.6x106 for the TE-like mode in non-slot configurations and 3x105 for the TM-like mode in full slot configuration, the highest yet reported for this type of structure and close to our design requirements for a laser.;Erbium was incorporated into the silica slot just 8.3 nm thick and photoluminescence was observed in full waveguide configuration. A simple phenomenological model based on spontaneous emission into a waveguide mode was developed, which predicted >10x Purcell enhancement of the luminescence decay in these slot waveguides even in the absence of a resonator, a result also yielded by a rigorous quantum electrodynamic analysis. These enhanced spontaneous emission rates were experimentally verified using time resolved photoluminescence decay and luminescence power measurements.;The results so far indicate that these slot structures could be the enablers for very efficient LEDs due to the highly preferential characteristic of the spontaneous emission to go into the single guided mode. The future goal will be to harness this behavior for novel silicon photonic light sources.
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