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Electrical through-wafer interconnects for integrated sensors and actuators.

机译:集成传感器和执行器的晶圆通孔互连。

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摘要

In microelectromechanical system (MEMS) applications, it is advantageous to have electronic circuitry as near the sensor or actuator as possible. To integrate MEMS devices with electronics on the same wafer, one must consider the typically different processes used to make electronics and MEMS. Having MEMS and electronics on the same wafer often leads to a compromise in performance of either or both systems and introduces the complexity of combining both fabrication processes. An excellent way of avoiding this compromise is to fabricate the optimum MEMS devices and electronics on separate wafers. Then, through-wafer interconnects (vias) with minimum resistances and capacitances are used to connect the MEMS devices on the front side of a wafer to bond pads on the back side of a wafer. The back side of the MEMS wafer can then be flip-chip bonded to the electronics wafer. Applications for this method include infrared (IR) focal plane arrays, spatial light modulators (SLM) of adaptive optics, and three-dimensional ultrasound imaging. The through-wafer interconnect can be modeled as a parallel capacitance and a series resistance. To reduce the parasitic effect of the interconnect, both the capacitance and resistance should be minimal. A technology for high density and low parasitic capacitance electrical through-wafer interconnects is presented here. With this technology, vertical through-wafer interconnects with high aspect ratios, connect an array of sensors or actuators on the front side to flip-chip bond pads on the back side. Minimal parasitic interconnect capacitance is achieved by forming a reverse-biased pn junction diode or metal insulator semiconductor (MIS) junction between the interconnect and substrate. Through-wafer vias for both SOI wafer bonded and surface micromachined MEMS devices are demonstrated. The interconnects described in this thesis provide an elegant means of connecting a transducer array to the electronics of an ASIC, fanout chip, or printed circuit board (PCB).
机译:在微机电系统(MEMS)应用中,使电子电路尽可能靠近传感器或致动器是有利的。为了将MEMS器件与电子器件集成在同一晶片上,必须考虑通常用于制造电子器件和MEMS的不同工艺。在同一晶片上具有MEMS和电子器件通常会导致其中一个或两个系统的性能折衷,并引入了将两个制造工艺组合在一起的复杂性。避免这种折衷的一种极好的方法是在单独的晶圆上制造最佳的MEMS器件和电子器件。然后,使用具有最小电阻和电容的晶圆互连(通孔)将晶圆正面的MEMS器件连接至晶圆背面的焊盘。然后可以将MEMS晶片的背面倒装芯片结合到电子晶片上。该方法的应用包括红外(IR)焦平面阵列,自适应光学器件的空间光调制器(SLM)和三维超声成像。晶圆互连可以建模为并联电容和串联电阻。为了减少互连的寄生效应,电容和电阻都应最小。此处介绍了一种用于高密度和低寄生电容的电晶片互连的技术。借助这种技术,具有高纵横比的垂直晶圆互连可以将正面的传感器或执行器阵列连接到背面的倒装芯片焊盘。通过在互连与衬底之间形成反向偏置的pn结二极管或金属绝缘体半导体(MIS)结,可以实现最小的寄生互连电容。展示了用于SOI晶圆键合和表面微加工MEMS器件的晶圆通孔。本文中描述的互连为将换能器阵列连接到ASIC,扇出芯片或印刷电路板(PCB)的电子设备提供了一种优雅的方法。

著录项

  • 作者

    Cheng, Ching-Hsiang.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 176 p.
  • 总页数 176
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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