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Nanosphere lithography applied to magnetic thin films.

机译:纳米球光刻技术应用于磁性薄膜。

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摘要

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.
机译:磁性纳米结构已在物理学和工程学的许多领域中得到广泛应用,并且纳米球光刻技术最近已成为制造此类纳米结构的有前途的工具。这项研究的目的是探索沉积在六边形紧密堆积的聚苯乙烯纳米球单层阵列上的铁磁材料薄膜的磁性,以及它们与典型的平面薄膜的磁性之间的区别。本研究的第一部分着重于确定在化学预处理的硅基板上沉积单层纳米球的最佳条件(通过滴涂)以及随后用扫描电子显微镜表征沉积的纳米球层的最佳条件。然后通过直流磁控溅射将单层坡莫合金(Ni80Fe20)沉积在纳米球阵列的顶部,从而形成磁性纳米帽的薄膜阵列。使用自制的磁光克尔效应(MOKE)系统以纵向排列方式测量薄膜的矫顽力。 MOKE测量表明,对于单层坡莫合金(Py),与平面薄膜相比,沉积在纳米球阵列上的薄膜的矫顽力增加。另外,对于相同的沉积层,矫顽力随着纳米球尺寸的减小而增加。据推测,相邻纳米帽之间的磁性交换解耦抑制了磁畴壁的传播,并且畴壁的这种钉扎被认为是矫顽力增加的主要来源。

著录项

  • 作者

    Gleason, Russell.;

  • 作者单位

    California State University, Long Beach.;

  • 授予单位 California State University, Long Beach.;
  • 学科 Physics General.;Nanoscience.
  • 学位 M.S.
  • 年度 2013
  • 页码 76 p.
  • 总页数 76
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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