Multi-Frequency Generation in CMOS for mm-Wave System Applications.

摘要

Driven by software-defined multi-standard radios, for frequency below Ku band, many VCO multiband techniques have been presented. However, such techniques have not been applied to mm-wave frequencies. Recently FCC released several mm-wave licensed and unlicensed bands to fulfill increasing demand for multi-Gb/sec data transmission. Therefore, it is expected that a need for a frequency source that can cover all or a substantial part of these bands will emerge in the future. Among various multiband techniques, the switched-capacitor and switched-inductor methods are the most common. However when using these methods at mm- wave frequencies, a large tuning range corresponds to excessive switch loss, and a resultant degradation in the Q of the LC tank.;This work presents two techniques, left-handed (LH) and even-odd mode techniques, which are suited to mm-wave multiband applications. Both techniques employ out-of-signal-path band selection switches, which can, therefore, break the fundamental tradeoff between frequency switching range and tank quality factor. As a result, both techniques achieve multi-band operation with FOMs comparable to single band oscillators. A LH dual-band millimeter-wave oscillator is implemented in digital 90-nm CMOS technology to demonstrate the LH technique. The proposed oscillator operates at 21.3 and 55.3 GHz, respectively, with a total power consumption of 14 mW. An even-odd mode quadruple band oscillator with 4 arbitrarily chosen frequencies (43, 49, 58 and 75 GHz) is implemented in 65-nm CMOS technology. The phase noise measurements taken at 1 MHz offset are -100.3, -95.3, -93.8 and -86.2 dBc/Hz, respectively, with a total power consumption of 12 mW.