W-band passive and active circuits in 65-nm bulk CMOS for passive imaging applications.

摘要

The design and implementation of mm-wave switches, variable attenuators, and a passive imaging system in 65-nm CMOS are presented. The design and analysis of shunt switches is presented with a demonstration circuit showing record performance for a single-pole single-throw switch with 1.6dB loss and 30dB isolation at 94GHz. Single-pole double-throw (SPDT) switches are shown, with 4dB insertion loss in the W-band (75-110GHz), and the only reported SPDT switch operating in the D-band (110-170GHz). A novel technique for implementing digitally controlled variable attenuation is presented, resulting in variable attenuation between 4 and 30dB in the W-band. Finally, a W-band radiometer is described integrating a record-high gain CMOS LNA, SPDT switch, and peak detector. This is the highest-frequency imaging system in CMOS with this level of integration, offering a responsivity over 90kV/W, and a noise-equivalent power less than 0.2pW/√Hz.