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An experimental study of electromigration in flip chip packages.

机译:倒装芯片封装中电迁移的实验研究。

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摘要

Flip chip technology, which offers advantages like smaller size, lesser weight, good I/O connection flexibility, high reliability and low cost is a well researched topic. The growing demand for smaller, lighter and more powerful components along with the ban on the use of lead in electronic assemblies has forced researchers to develop fine pitched lead-free packages. Some of the key concerns with fine pitched lead free flip chip packages are material compatibility issues regarding solder joint properties, new underfill materials properties like modulus, coefficient of thermal expansion, viscosity, surface tension, and filler content.;Electromigration occurring in solder bumps is one of the most important reliability concerns for these products. Previously, due to larger sized bumps and lower power applications, electromigration was not a reliability concern in flip chip products. The demand for increasing power in the chip along with reduced operational voltages ultimately results in an increase in the current density in the solder joint. For solder joints in a flip chip package, current densities in the range of 104 A/cm2 can cause failures due to electromigration.;The objective of this research endeavor was to determine the activation energy and current density exponent values for lead free solders by measuring the actual bump temperature rise due to Joule heating effects. A direct comparison in the lifetime of the lead free solder bumps using three different UBM structures was studied in detail.;The activation energy and current density exponent values for lead free solders using thick Cu UBM were determined. This was accomplished by measuring the actual bump temperature rise due to Joule heating effects. In this research temperature sensors were strategically placed right above the top of the solder bump to determine the actual bump temperature when current is passed through the bumps. A direct comparison in the lifetime of the lead free solder bumps using three different UBM structures was studied in detail. It was found that UBM with Cu/Ni cap UBM performed better than Cu UBM and Ni UBM during high stress conditions.
机译:倒装芯片技术具有更小的尺寸,更轻的重量,良好的I / O连接灵活性,高可靠性和低成本等优点,这是一个经过充分研究的主题。对更小,更轻,更强大的组件的需求不断增长,以及电子组件中禁止使用铅的禁令,迫使研究人员开发出细间距无铅封装。细间距无铅倒装芯片封装的一些关键问题是关于焊点特性,新的底部填充材料特性(例如模量,热膨胀系数,粘度,表面张力和填充剂含量)的材料兼容性问题。这些产品最重要的可靠性问题之一。以前,由于较大尺寸的凸块和较低的功率应用,在倒装芯片产品中电迁移并不是可靠性问题。增加芯片功率以及降低工作电压的需求最终导致了焊点电流密度的增加。对于倒装芯片封装中的焊点,电流密度在104 A / cm2范围内可能会因电迁移而导致故障。;本研究的目的是通过测量无铅焊料的活化能和电流密度指数值实际的凸点温度由于焦耳热效应而升高。详细研究了使用三种不同UBM结构的无铅焊料凸块的寿命的直接比较。;确定了使用厚铜UBM的无铅焊料的活化能和电流密度指数值。这是通过测量由于焦耳热效应引起的实际凸点温度升高来实现的。在这项研究中,将温度传感器策略性地放置在焊料凸块顶部的正上方,以确定当电流通过凸块时的实际凸块温度。详细研究了使用三种不同的UBM结构的无铅焊料凸块寿命的直接比较。发现在高应力条件下,带有铜/镍盖UBM的UBM的性能优于Cu UBM和Ni UBM。

著录项

  • 作者

    Selvaraj, Mukesh K.;

  • 作者单位

    State University of New York at Binghamton.;

  • 授予单位 State University of New York at Binghamton.;
  • 学科 Engineering System Science.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 207 p.
  • 总页数 207
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 系统科学;
  • 关键词

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