Gallium arsenide and indium gallium arsenide MOS devices with ALD high-k dielectrics.

摘要

The search and progress for alternative gate dielectrics have attracted great attention during recent years due to every shrinking device dimensions for silicon based complementary metal-oxide-semiconductor (CMOS) industry. Meanwhile, in order to further push the performance envelope of modern transistors built on strained silicon and germanium, novel devices on III-V semiconductor materials are studied extensively as high priority alternatives. The combination of high-k dielectrics and heterogeneously grown high-mobility compound semiconductors on silicon or silicon-on-insulator (SOI) substrates could meet the growing demands on high switching speed and low operating power. Using III-V semiconductors as conducting channels, these transistors could eventually exhibit much elevated performance promised by high mobility characteristic of the compound semiconductor materials and provide an attractive alternative to silicon based devices.;A study of integrating novel dielectrics on III-V semiconductors is presented, focusing on oxide dielectrics grown by atomic layer deposition (ALD) technique for high performance metal-oxide-semiconductor field effect transistor (MOSFET) applications. This study includes the fabrication and characterization of MOS capacitors, MOS depletion mode (D-mode) and enhancement mode (E-mode) field effect transistors on III-V semiconductor substrates, with strong emphasis on the E-mode MOSFET due to the fact that enhancement mode MOSFET is the technologically most important device in digital circuitry.;Parallel to the research on ALD oxide MOSFETs, a novel high performance MISFET based on self-assembled organic nanodielectrics (SANDs) on gallium-arsenide (GaAs) substrate is fabricated and characterized. Capacitance-voltage and conductance voltage (C-V, G-V) measurements and electrical characterizations on dielectrics, MOSFETs and insulator-semiconductor interfaces are also presented in this study.