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Controlled Structure of Zinc Oxide by Means of Side Flow Type MOCVD

机译:侧流式MOCVD控制氧化锌的结构

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摘要

We have demonstrated that the ZnO deposited on sapphire (11-20) substrate is controlled to various structures by side flow type MOCVD at high temperature (above 973 K). We found that the crystal quality of ZnO having film structure is better than that of ZnO nanorod although they are fabricated under the same temperature condition. Also, in the case of ZnO nanorod, it is found that its crystal quality improves dramatically at higher temperature (1073 K).
机译:我们已经证明,在高温(高于973 K)下,通过侧流式MOCVD将沉积在蓝宝石(11-20)衬底上的ZnO控制为各种结构。我们发现具有薄膜结构的ZnO的晶体质量比ZnO纳米棒的晶体质量更好,尽管它们是在相同温度条件下制造的。另外,发现在ZnO纳米棒的情况下,其晶体质量在较高温度(1073K)下显着提高。

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