MANUFACTURING METHOD OF THE VERTICAL TYPE LIGHT EMITTING DIODE INCLUDING THE ZINC OXIDE NANOSTRUCTURES WHICH EASILY CONTROLS DIAMETER AND THE LENGTH OF THE NANOSTRUCTURES

摘要

PURPOSE: In the temperature which the manufacturing method of the vertical type light emitting diode including the zinc oxide nanostructures lows, the zinc oxide nanostructures is constituted at the upper part of the vertical type light emitting diode.;CONSTITUTION: The vertical type light emitting diode top is spreaded to the photoresist(30). The photolithographic process is introduced and the n-type semiconductor layer(24) exposes. The vertical type light emitting diode in which the n-type semiconductor layer exposes is dipped in the zinc precursor solution.;COPYRIGHT KIPO 2011