MOCVD Deposition of Group V Doped CdTe in Sublimated CdTe and CdSeTe Devices

摘要

) of photovoltaic devices. This work aimed to develop methods for quickly incorporating group V as a p-type dopant using Metal-Organic Chemical Vapor Deposition (MOCVD) precursor injection. CdTe:N was deposited by MOCVD injection during sublimation of CdTe. CdTe:As was deposited via MOVCD onto an existing sublimated CdSeTe layer to produce doped CdSeTe/CdTe devices. Nitrogen doping resulted in increased external quantum efficiency and an improved diode curve as compared to a device exposed to cadmium overpressure without the presence of MOVCD nitrogen.