Direct growth of AlN thin layer on (111) Si substrate by rf-MBE

摘要

The nitridation process of (111)Si surface has been studied by in-situ reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) measurements. It has been clarified that the nitridation of the Si surface is occurred even if the shutter of the discharged rf-plasma gun is closed. The growth process of AlN epilayer on the Si substrate by migration enhanced epitaxy (MEE) has been investigated by in-situ RHEED and atomic force microscopy (AFM) observations. It has been found that the AlN epilayer is directly grown on (111) Si by MEE growth.