Low-temperature chemical vapor deposition of 3C-SiC on 6H-SiC- an X-ray triple-crystal diffractometry and X-ray topography study

摘要

Highly perfect 3C-SiC thin films, on 6H-SiC deposited by the chemical vapor deposition at low temperature with various Cl/Si H/Si and C/Si ratios were characterized by x-ray high resolution triple crystal diffractometry and double crystal topographic methods. The films were epitaxial with a low defect density present (mostly inthe range of 10~7/cm~2). X-ray topography revealed stacking faults, low angle grain boundaries, dislocations and inversion double positioning boundaries present in the film and substrate.