Drain Leakage Current in MuGFETs at High Temperatures

摘要

This paper will show the drain leakage current (Iouak) behavior in SOI Multiple-Gate devices (MuGFET) for double-gate (DGFinFET) and triple-gate (TGFinFET) configurations, operating since room temperature up to 300℃. Through three dimensional (3D) numerical simulations results is observed that IoLeak is composed mainly by electrons for all devices operating at same conditions. Besides it, lower IoLeak values are observed for all TGFinFET, when compared to DGFinFETs, analyzed in this investigation.