Dy~(3+) Emission from GaAIN Powder and Radio-Frequency Sputtered Thin Film

摘要

A three-step solution method previously used to synthesize A1N and GaN powders has been used to synthesize alloys of GaAIN. With the use of a stainless steel pressure vessel, single phase GaAIN powders were successfully synthesized. Powders of GaAIN activated with Dy~(3+) showed its related luminescence. The emission intensity of Dy~(3+) increased when Al was incorporated in the GaN host. Radio-frequency sputtering of the same source powder did not produce a film with the same composition as the source material; only an epitaxial GaN film was deposited. X-ray diffraction was used to characterize the phase of the powder and thin film. As Dy~(3+) emission was observed for GaAlN:Dy~(3+) but not for GaN:Dy~(3+) powders synthesized by the same approach. This suggests that Al incorporation allows the luminescence of this rare-earth activator in GaN.