Varistor-type bidirectional switch (JMAX>10⁷A/cm², selectivity∼10⁴) for 3D bipolar resistive memory arrays

摘要

We demonstrate a varistor-type bidirectional switch (VBS) with excellent selection property for future 3D bipolar resistive memory array. A highly non-linear VBS showed superior performances including high current density (>3×10⁷A/cm²) and high selectivity (∼10⁴). The non-linear I–V characteristics can be explained by varistor-type multi-layer tunnel barriers, which were formed by Ta incorporation into thin TiO2. Furthermore, the 1S1R device showed excellent suppression of leakage current (>10⁴ reduction) at 1/2VREAD, which is promising for ultra-high density resistive memory applications.