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Resistive Switching: Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (Adv. Funct. Mater. 10/2017)

机译：电阻切换：多层六边形氮化物中的晶粒边界辅助双极和阈值电阻切换的共存（ADV。Funct。Matter。10/2017）

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Chengbin Pan; Yanfeng Ji; Na Xiao; Fei Hui; Kechao Tang; Yuzheng Guo; Xiaoming Xie; Francesco M. Puglisi; Luca Larcher; Enrique Miranda; Lanlan Jiang; Yuanyuan Shi; Ilia Valov; Paul C. McIntyre; Rainer Waser; Mario Lanza;
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1. Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride [J] . Pan Chengbin, Ji Yanfeng, Xiao Na, Advanced Functional Materials . 2017,第10期

机译：多层六方氮化硼中晶界辅助双极和阈值电阻转换的共存
2. Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films [J] . A. Ranjan, N. Raghavan, S. J. O’Shea, Scientific reports. . 2018,第1期

机译：二维六方氮化硼薄膜中双极和阈值电阻转换的导电原子力显微镜研究
3. Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells [J] . Tornil-Sin S., Siminiceanu R.I., Sung Y.M., Device and Materials Reliability, IEEE Transactions on . 2013,第1期

机译：基于氮化锆的电阻切换存储单元中观察到的双极电阻切换现象和电阻切换机制
4. Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride [C] . Lukas Völkel, Dennis Braun, Melkamu Belete, Silicon Nanoelectronics Workshop . 2021

机译：基于人工堆叠的化学蒸汽沉积六方氮化物的椎间体电阻切换
5. An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements [D] . Waite, Ruth I. 1987

机译：多层薄膜磁阻存储元件的开关阈值研究
6. Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films [O] . A. Ranjan, N. Raghavan, S. J. O’Shea, -1

机译：二维六方氮化硼薄膜中双极和阈值电阻转换的导电原子力显微镜研究
7. Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films [O] . A. Ranjan, N. Raghavan, S. J. O’Shea, 2018

机译：2D六边形氮化硼薄膜双极和阈值电阻切换的导电原子力显微镜研究

Resistive Switching: Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (Adv. Funct. Mater. 10/2017)

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