Towards high performance Ge1−xSnx and In0.7Ga0.3As CMOS: A novel common gate stack featuring sub-400 °C Si2H6 passivation, single TaN metal gate, and sub-1.3 nm EOT

摘要

We report a novel common gate stack solution for Ge1−xSnx P-MOSFET and In0.7Ga0.3As N-MOSFET, featuring sub-400 °C Si2H6 passivation, sub-1.3 nm EOT, and single TaN metal gate. Symmetric VTH, high performance, low gate leakage, negligible hysteresis, and excellent reliability were realized. Using this gate stack, the world''s first GeSn short-channel device with gate length LG down to 250 nm was realized. Drive current of more than 1000 µA/µm was achieved, with peak intrinsic transconductance of ∼ 465 µS/µm at VDS of −1.1 V.