1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications

摘要

The electrical performance of GeneSiC''s 1200 V/7 A SiC Super Junction Transistor (SJT) is compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents of <100 μA at 325 °C, turn-on and turn-off switching transients of <15 ns at 250 °C, current gain as high as 72, on-resistance as low as 235 mΩ, second-breakdown-free square RBSOA, and short-circuit withstand time of 22 μs were measured on the SiC SJTs. For switching 7 A and 800 V at 100 kHz, the SiC SJT + GeneSiC SiC Schottky rectifier as Free Wheeling Diode (FWD) achieved a total power loss reduction of about 64% when compared to the best all-Si IGBT+FWD configuration and a power loss reduction of about 47 %, when compared to the best Si IGBT + SiC Schottky FWD.