SUPER-JUNCTION POWER VDMOS HAVING EXTREMELY LOW REVERSE RECOVERY CHARGE

摘要

The present invention relates to a super-junction power VDMOS having an extremely low reverse recovery charge, comprising an N-type substrate also serving as a drain and an N-type drift region. A first P column is provided in the N-type drift region; a first P-type body region is provided in the top of the first P column; an NMOS is provided in the first P-type body region; a SiO2 isolation layer is provided between the NMOS and the first P-type body region; and a first P-type heavily doped region is provided in the first P-type body region. Source metal of a super-junction VDMOS, source metal of the NMOS, and the first P-type heavily doped region are connected; the drain of the super-junction VDMOS serves as the drain of the super-junction power VDMOS; the gate of the super-junction VDMOS and the gate of the NMOS are connected and serve as the gate of the super-junction power VDMOS; the drain of the NMOS serves as the source of the super-junction power VDMOS; and an N-type drift region of the super-junction VDMOS is provided with a Schottky contact which is connected to the drain of the NMOS, so as to form a Schottky diode of which the cathode and anode are respectively connected to the drain and source in the structure provided by the present invention.