High-voltage superjunction VDMOS with low reverse recovery loss

摘要

A new design of the high-voltage superjunction VDMOS (SJ-VDMOS) structure is proposed to minimise the reverse recovery losses of the body diode and the noise during the switching process. The key feature of the structure is that a discontinuous P+ region in the source is implemented which can decrease the carrier injection efficiency. Numerical results indicate that the reverse recovery charge and the overshoot voltage of the proposed structure is decreased by 76.5% and 52.5%, respectively, compared to the conventional SJ-VDMOS structure, while maintaining the same breakdown voltage.