Lab. of Comput. Phys., Tech. Univ. of Lodz, Lodz, Poland;
III-V semiconductors; cracks; energy gap; gallium arsenide; gallium compounds; laser cavity resonators; laser tuning; quantum well lasers; GaInNAs-GaAs; active-region gain spectrum; cracking; energy gaps; lasing emission; lasing operation; lasing threshold; nitride content; oxide-confined quantum-well VCSEL; radiation emission; self-consistent model; structure defects; threshold currents; wavelength 1.3 mum; 1.3-µm emission; VCSEL models; oxide-confined VCSELs;
机译:救济口径对基于GaInNAs GaAs的VCSEL 1.3-
机译:对具有InGaAs / GaAs量子阱有源区和故意失谐的光腔的基于GaAs的VCSEL达到1.30μm发射的可能性进行物理分析
机译:通过载流子寿命测量,在生长1.3μmInGaAsN-GaAsP-GaAs QW激光器的MOCVD中增加单分子复合
机译:达到达到1.3-(mu)频率发射的各种方法的比较分析/ GaAs QW Vcsels
机译:高斯剖面光束整形和多模VCSEL和RCLED发射的衍射光学元件的设计和分析
机译:分析生长和退火的n型和p型调制掺杂GaInNAs / GaAs量子阱中的霍尔迁移率
机译:应变补偿系统的带对准比较 关于Gaas和Inp衬底的Gainnas QWs