Effect of Relief Aperture on Single-Fundamental-Mode Emission of 1.3- (mu ) m GaInNAs GaAs-Based VCSELs

摘要

This paper investigates methods of suppressing higher order transverse modes in a GaInNAs/GaAs quantum-well GaAs-based vertical-cavity surface-emitting diode laser, with the aid of a 3-D self-consistent model. The inverted surface relief design, which creates the antiphase condition, proved efficient at suppressing higher order transverse modes, in spite of unfavorable thermal effects.