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Novel synthetic precursor of functionalized highly oligothiophenes

机译:功能化的高度低聚噻吩的新型合成前体

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摘要

The development of structurally well-defined #alpha# -oligothiophenes with dimension comparable to the present limit of nano-patterning techniques (approx 10 nm gap regime) is of crucial importance to investigate electronic conduction through linear #pi# -conjugated molecules. In many cases, the chain extension of #pi# -conjugated oligomers up to this size and the chemical modifications of the obtained highly ologomers have been hampered by solubility problems. We recently developed a synthetic approach to functionalized oligothiophenes using the N-silyl-protected 3,4-diaminothiophene as a key unit (Scheme 1). Here we report a novel synthetic precursor of various functionalized approx 10nmlong ologothiophenes based on this tactics.
机译:尺寸可与纳米图案技术的当前极限(约10 nm的间隙范围)相媲美的结构清晰的#alpha#-低聚噻吩的开发对于研究通过线性#pi#共轭分子的电子传导至关重要。在许多情况下,#pi#共轭的低聚物的链延长至该大小以及所获得的高度寡聚物的化学修饰已被溶解性问题所阻碍。我们最近开发了一种使用N-甲硅烷基保护的3,4-二氨基噻吩作为关键单元的功能化寡聚噻吩的合成方法(方案1)。在这里,我们报告基于这种策略的各种功能化的大约10纳米长的ologothiophenes的新型合成前体。

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