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Novel synthetic precursor of functionalized highly oligothiophenes

机译:官能化高低噻吩的新型合成前体

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The development of structurally well-defined #alpha# -oligothiophenes with dimension comparable to the present limit of nano-patterning techniques (approx 10 nm gap regime) is of crucial importance to investigate electronic conduction through linear #pi# -conjugated molecules. In many cases, the chain extension of #pi# -conjugated oligomers up to this size and the chemical modifications of the obtained highly ologomers have been hampered by solubility problems. We recently developed a synthetic approach to functionalized oligothiophenes using the N-silyl-protected 3,4-diaminothiophene as a key unit (Scheme 1). Here we report a novel synthetic precursor of various functionalized approx 10nmlong ologothiophenes based on this tactics.
机译:结构良好定义的#α-α-olighiophenes的尺寸与纳米图案化技术(大约10nm间隙制度)的限制相当,对通过线性#pi#-conjugated分子调查电子传导至关重要。在许多情况下,通过溶解性问题阻碍了#pi#-conjugated的低聚物的链延伸和所获得的高渗透形式的化学修饰。我们最近使用N-甲硅烷基保护的3,4-二氨基噻吩作为关键单元(方案1),开发了一种合成方法以官能化的寡核烯烃(方案1)。在这里,我们报告了基于此策略的各种官能化的新型官能化的新型合成前体。

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