Surface morphology of In_(0.22)Ga_(0.78)As layer grown on (nnl)A and (nnl)B GaAs substrate by MBE

摘要

Self-organized quantum wires (QWRs) grwon on high-index crystal planes have high potential to apply to optical devices because of their high density, high optical quality and easy fabrication. Recently, we reported high-density GaAs/(GaAs)_m(AlAs)_n QWRs grwon on a (775)B-oriented GaAs substrate by MBE, and room temperature (RT) oscillation of (775)B GaAs/(GaAs)_4(AlAs)_2 QWR lasers (1, 2). The wavelength of the (775)B GaAs QWR lasers, however, was about 760 nm at RT, which is too short to apply to the vertical cavity surface emitting lasers with GaAs/AlAs vertical vcavity. In this paper, we investigate MBE grwoth of InGaAs layers on (nnl)A and (nnl)B GaAs substrates for developing InGaAs QWRs structure for longer wavelength light emission.