MOMBE growth and characterization of InAs dots including Mn atoms

摘要

Study on diluted magnetic semiconductors (DMS's) has attracted much attention from the viewpoint of the control of spins in semiconductors. We have suggested quantum dot structures including magnetic impurities such as Mn. Furthermore, we consider that it is possible to control spins and charges in quantum structures if we could make such quantum structures. So we have tried to make such structures. We have fabricated INAs dots including Mn atoms by MOMBE method [1]. Mn atoms were first deposited on (100) GaAs substrate and InAs dots were grown by using TMIn and TDMAAs as group III and V sources, resp ectively. Then larger and smaller size dots were formed at the same time. Schematic drawing of InAs dots inciuding Mn atoms and InAs dots grown by S-K mode growth is shown in Fig.1. The larger size dots were formed due to the enhanced decomposition of MO precursors at Mn nuclei and smaller dots were formed by S-K mode growth [2].