Dynamic processes of InAs quantum-dots growth observed by reflectance-differnce spectroscopy

摘要

When InAs is deposited on GaAs(001) by molecular-beam epitaxy, three-dimensional islands, i.e., quantum-dots, are grown by the Stranski-Krastanov mode. The critical thickness for the growth-mode transition is about one monolayer (ML). Therefore, understanding of the growth mechanism in atomic scale is considered to be necessary. In this study, we focus our attention on the growth-mode transition from the two-dimensional layer-by-layer growth to the three-dimensional island growth. Reflectance-difference (RD) spectroscopy and reflection high-energy electron diffraction (RHEED) measurements have been performed during growth to investigate a relation between the surface-reconstructured structure and the growth mode.