Using in-situ deep-level transient spectroscopy and capacitance-voltage measurements, electrically active vacancy-related point defects have been studied in n-type silicon after MeV Si- and Ge-ion implantation at 85 and 295 K. In all cases, photoexcitation during implantation is shown to reduce the total number of the vacancy complexes, while depth distribution of the effect is strongly dependent on the ion mass and implantation temperature. It is observed that vacancy-oxygen complex formation is not completed immediately after low temperature implantation, but continues during heating to room temperature. This behavior is explained by the existence of defect clusters, which act as a source of vacancies duirng annealing. The number of vacancies stored in these clusters is reduced by in-situ photoexcitation.
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