首页> 外文会议>Third International Symposium on Chemical Mechanical Planarization(CMP) in Integrated Circuit(IC) Device Manufacturing, 3rd, Oct 20-22, 1999, Honolulu, Hawaii >PROCESS INTEGRATION ISSUES WHILE IMPLEMENTING CHEMICAL MECHANICAL PLANARIZATION (CMP) INTO EXISTING PROCESS TECHNOLOGIES
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PROCESS INTEGRATION ISSUES WHILE IMPLEMENTING CHEMICAL MECHANICAL PLANARIZATION (CMP) INTO EXISTING PROCESS TECHNOLOGIES

机译:在将化学机械平面化(CMP)应用于现有工艺技术的过程中出现工艺集成问题

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Several process integration implications arise while implementing Chemical Mechanical Planarization (CMP) into existing process technologies. These implications if not addressed properly can diminish the advantages of CMP in terms of wafer processing costs, end of line yield and ease of manufacturing. This paper will discuss integration solutions that have been implemented in high volume manufacturing successfully. Results of various integration schemes designed to resolve the following problems will be presented: bleach-out steps, variation in post reverse active etch oxide thickness, removal rate variations for Pre-Metal Dielectric (PMD) at CMP, dishing in damascene structures. General strategy for running a CMP area in high volume manufacturing for facilities with numerous products will also be discussed. Results of production CMP metrics obtained by utilizing the above mentioned integration schemes and strategy will also be presented.
机译:在现有工艺技术中实施化学机械平面化(CMP)时,会产生一些工艺集成问题。如果不能正确解决这些问题,则会降低CMP在晶圆加工成本,线下成品率和易于制造方面的优势。本文将讨论已成功在大批量生产中实施的集成解决方案。将介绍旨在解决以下问题的各种集成方案的结果:漂白步骤,反向活性蚀刻后氧化物厚度的变化,CMP时金属前电介质(PMD)的去除速率变化,镶嵌结构中的凹陷。还将讨论在具有大量产品的工厂中进行大批量生产的CMP区域的一般策略。还将介绍通过利用上述集成方案和策略获得的生产CMP度量的结果。

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