Department of Electrical Engineering, Analog Devices Integrated Microsystems Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA;
Department of Electrical Engineering, Analog Devices Integrated Microsystems Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA;
Advanced Display Research Center, Kyung Hee University, Seoul, Korea;
Advanced Display Research Center, Kyung Hee University, Seoul, Korea;
Corning Incorporated, Science and Technology, Corning, New York 14870, USA;
et al;
机译:结晶技术和栅极绝缘子沉积方法对多晶硅晶体管性能和可靠性的影响
机译:带有光电CVD和APCVD的具有两层栅极绝缘体的低温多晶硅TFT SiO / sub 2 /
机译:一种新的结构,以减少聚酰亚胺折叠低温多晶硅TFT的机械弯曲下的降解
机译:三TFT技术制造的TFT的1 / f噪声性能:玻璃,低温多晶硅在玻璃上的单晶硅,和绝缘体上的硅
机译:适用于玻璃上系统大面积微电子应用的新型低温多晶硅薄膜晶体管。
机译:通过TFT接触势垒工程技术制造高均匀度多晶硅电路
机译:多晶硅条上的低温制造TFT