Flow Rate's Influence on Low Temperature Silicon Oxide Deposited by Atmospheric Pressure Plasma Jet for Organic Thin Film Transistor Application

摘要

Organic thin film transistors attracted many researchers and companies to investigate and develop due to their future applications mainly consist of flexible display and flexible electronics. Flexible displays are considered as the revolutionary product because it could be applied for e-paper, e-book, and large area screen which would decrease the use of woods, keep environment, and make our life colorful (1-4). On the other hand, flexible electronics, including ratio frequency identification smart card (RFID) and sensors such as pressure sensor, gas sensor, bio-sensor, and electronic artificial skin (5-6). In recent years, although the performance of OTFTs have great improvement, there are still some issues influencing the development of OTFTs. These issues of OTFTs mainly include low mobility, stability, low temperature and low cost processes and high operation voltage. The mobility of organic thin film transistors is only about 0.001-10 cm~2/V-s, much lower than silicon-base MOSFET and polysilicon TFT. The mobility of OTFTs is dominated by organic material and ordering of organic material (7-8). On the other hand, stability of organic semiconductor material is a serious problem. Electrical characteristics of OTFTs would be degraded by oxygen, moisture, and organic solvent and so on (9-10).