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Thin Film Transistors As Driving Devices for Attached Devices

机译:薄膜晶体管作为连接设备的驱动设备

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摘要

TFTs can be used as driving or detecting devices for purposes of optical, chemical, or biological sensing, imaging, displays, etc. Assuming the stability is not an issue, the poly-Si, IGZO, and a-Si:H TFTs were compared with respect to the device driving capability. For the drain-attached device, the maximum available power is determined by the device's resistance and the TFT's on-current. For the gate-attached device, the study is based on connecting a resistor and a capacitor in parallel. The raise or decay of the drain current is dependent on the RC time delay. Although the high mobility TFT has many advnatages, the low mobility TFT is adequate for certain applications. In real applications, the manufactuability and cost are important factors in choosing the TFT.
机译:TFT可用作光学,化学或生物传感,成像,显示器等目的的驱动或检测设备。假设稳定性不是问题,则对多晶硅,IGZO和a-Si:H TFT进行比较关于设备驱动能力。对于与漏极相连的器件,最大可用功率取决于器件的电阻和TFT的导通电流。对于门连接设备,研究基于并联连接电阻器和电容器。漏极电流的上升或下降取决于RC时间延迟。尽管高迁移率TFT具有许多优势,但低迁移率TFT足以满足某些应用的需求。在实际应用中,可制造性和成本是选择TFT的重要因素。

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  • 来源
    《Thin film transistors 12》|2014年|145-153|共9页
  • 会议地点 Cancun(MX)
  • 作者

    Yue Kuo; Geng Wei Chang;

  • 作者单位

    Thin Film Nano Microelectronics Research Lab, Artie McFerrin Department of Chemical Engineering, Texas AM University, College Station, TX 77843;

    Thin Film Nano Microelectronics Research Lab, Artie McFerrin Department of Chemical Engineering, Texas AM University, College Station, TX 77843,Department of Photonics Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu, 300, Taiwan, R. O.C.;

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