Influence of process parameters on fabrication of PZT(53/47) thick films by a dip-coating process

摘要

Crack-free polycrystalline PbZr_(0.53)Ti_(0.47)O_3 (PZT(53/47)) thick films (1～30 μm) with peroviskite structure have been prepared from a dip-coating process. The influence of withdrawal speed and precursor solution concentration on the morphology of the films was examined. The effects of the substrate characteristics on the film phase structure and microstructure were investigated and evaluated. The ferroelectric and dielectric properties have been examined and discussed. PZT (53/47) thick films on Pt/Ti/SiO_2Si wafer and Pt/Ti foil substrates all exhibit excellent electric properties, Pr: 32～35 μC/cm~2; Ec: 32～35kV/cm, ε_r: 900～940; tanδ: 0.02～0.04. These materials promise a good application in micro-devices including micro-pump, micro-actuator, etc..