Formation of GaAs hollow above InAs quantum dots

机译：在InAs量子点上方形成GaAs空心

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摘要

GaAs hollow nanostructure is constructed above low-temperature (250℃) InAs quantum dots after a thin GaAs layer capping at 480℃. The hollows mostly disappeared after the high temperature annealing at 580℃. The formation mechanism is simply discussed.

机译：GaAs中空纳米结构是在480℃的薄GaAs层覆盖后在低温（250℃）InAs量子点之上构建的。 580℃高温退火后，空心消失了。简单讨论了形成机理。

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来源
《Thin Film Physics and Applications》|2004年|P.74-77|共4页
会议地点 Shanghai(CN)
作者
H. H. ZHAN; J. Y. Kang;
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作者单位

Department of Physics, Photonic Research Center, Pen Tung Sah MEMS Research Center, Xiamen University, Xiamen 361005, People's Republic of China;

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会议组织
原文格式 PDF
正文语种 eng
中图分类薄膜物理学;材料和工作物质;
关键词
micro hollow; nanostructure; InAs QDs; MBE;

机译：微空心；纳米结构； InAs量子点； MBE;

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机译：InAlGaAs和GaAs组合势垒厚度对MBE生长的InAs / GaAs量子点异质结构堆叠层中点形成持续时间的影响
2. Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties [J] . Masato Ohmori, Pavel Vitushinskiy, Tomoya Kojima, _Applied Physics Express . 2013,第4期

机译：InAs量子点上自组织棒生长形成InAs / AlGaAs / GaAs纳米线结构及其传输特性
3. Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation [J] . Rahul Kumar, Yurii Maidaniuk, Samir K. Saha, Journal of Applied Physics . 2020,第6期

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4. Formation of GaAs hollow above InAs quantum dots [C] . Hua H. Zhan, Jun Y. Kang International Conference on Thin Film Physics and Applications . 2004

机译：GaAs中空的形成在inas量子点上方
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

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6. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

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7. O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy [O] . Bin Zhang, Wen-Qi Wei, Jian-Huan Wang, 2019

机译：通过原位杂交外延在Si（001）中空基板上的O频段INAS / GaAs量子点微胶凝激光
8. Growth and Characterization of Low Density InAs/GaAs Quantum Dots (QD) for Quantum Information Processes [R] . Choi, W. J. 2010

机译：用于量子信息处理的低密度Inas / Gaas量子点（QD）的生长和表征

Formation of GaAs hollow above InAs quantum dots

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