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Dynamic study and structure enhancement of small outline dual-in-line memory module

机译:小轮廓双列直插式内存模块的动态研究与结构增强

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The purpose of this research is to enhance the structure of the 204-pin small outline dual in-line memory module (SODIMM) against the drop impact. According to the JEDEC regulations, the enhancement of PCB clips should be attempted to increase the resistance against drop impact. From high speed camera observation, the SODIMM module is pushed away from the PCB clips during drop impact. Therefore, the board pushing experiment was performed to measure the resistant force against PCB clips. Thereafter, two stages of finite element analysis (FEA) were executed to improve the resistance force of PCB clips. In the first stage, the finite element model of the SODIMM module was built to calculate the total resistance force against the constraint of PCB clips using FEA software ANSYSreg. The simulation results were validated well with the board pushing experiment. The total resistance force is about 5.39 N in the original design. The second stage of the analysis is to proceed with the structural enhancement of PCB clips. Several parametric studies including discussions on the angle between clip and PCB, the length of the PCB clip, and the material properties of clip, were performed to improve the strength of clips. After the structural optimization, the total resistant force against the constraint of clip increased from 5.39 N to 8 N.
机译:这项研究的目的是增强204引脚小尺寸双列直插式内存模块(SODIMM)的结构,以防跌落冲击。根据JEDEC法规,应尝试增强PCB夹的强度,以增加抗跌落冲击的能力。从高速摄像头观察,在跌落冲击期间,SODIMM模块被推离PCB固定夹。因此,进行了推板实验以测量对PCB夹的抵抗力。此后,执行两个阶段的有限元分析(FEA)以提高PCB夹的抵抗力。在第一阶段,使用FEA软件ANSYSreg建立SODIMM模块的有限元模型,以计算针对PCB夹具约束的总阻力。通过推板实验对仿真结果进行了很好的验证。在原始设计中,总阻力约为5.39N。分析的第二阶段是进行PCB夹的结构增强。为了提高夹子的强度,进行了一些参数研究,包括关于夹子与PCB之间的角度,PCB夹子的长度以及夹子的材料特性的讨论。经过结构优化后,针对卡子约束的总抵抗力从5.39 N增加到8N。

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