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Dynamic Study and Structure Enhancement of Small Outline Dual-in-line Memory Module

机译:小型概要双型记忆模块的动态研究和结构增强

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The purpose of this research is to enhance the structure of the 204-pin small outline dual in-line memory module (SODIMM) against the drop impact. According to the JEDEC regulations, the enhancement of PCB clips should be attempted to increase the resistance against drop impact. From high speed camera observation, the SODIMM module is pushed away from the PCB clips during drop impact. Therefore, the board pushing experiment was performed to measure the resistant force against PCB clips. Thereafter, two stages of finite element analysis (FEA) were executed to improve the resistance force of PCB clips. In the first stage, the finite element model of the SODIMM module was built to calculate the total resistance force against the constraint of PCB clips using FEA software ANSYS. The simulation results were validated well with the board pushing experiment. The total resistance force is about 5.39 N in the original design. The second stage of the analysis is to proceed with the structural enhancement of PCB clips. Several parametric studies including discussions on the angle between clip and PCB, the length of the PCB clip, and the material properties of clip, were performed to improve the strength of clips. After the structural optimization, the total resistant force against the constraint of clip increased from 5.39 N to 8 N.
机译:本研究的目的是提高204针小型轮廓双线内存模块(SODIMM)的结构,抵抗下降撞击。根据JEDEC规定,应试图增加PCB夹的增强,以增加抗损失的抵抗力。从高速摄像机观察,在液滴冲击期间,SODIMM模块被推离PCB夹子。因此,进行电路板推动实验以测量对PCB夹的抗性力。此后,执行了两个有限元分析(FEA)的阶段以改善PCB夹的阻力。在第一阶段,建立了SODIMM模块的有限元模型,以计算使用FEA软件ANSYS对PCB剪辑约束的总阻力。仿真结果与电路板推动实验效果很好。在原始设计中,总阻力约为5.39n。分析的第二阶段是继续进行PCB夹的结构增强。进行了几种参数研究,包括关于夹子和PCB之间的角度,PCB夹的长度和夹子的材料特性的讨论以提高夹子的强度。在结构优化之后,对夹子约束的总抗力从5.39 n增加到8 n。

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