Abstract: High power near diffraction limited external cavitysemiconductor tapered lasers that use asingle-angled-facet input preamplifier are demonstratedfor the first time. Four electrodes (three in thepreamplifier region and one in the power section) onthe device were implemented to investigate theswitching contrast ratio of the output laser intensity.More than 1 W CW of power was obtained with a slopeefficiency of 0.7 W/A, and close to 20 dB intensitycontrast ratio was obtained by switching off two andthree electrodes in the input ridge section. Also, morethan 50 dB side-mode suppression ratio and 60 nm tuningbandwidth were obtained. These powers were found to beemitted in a near-diffraction- limited beam.!9
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机译：摘要：首次展示了使用单面输入前置放大器的高功率近衍射受限外腔半导体锥形激光器。在器件上安装了四个电极（前置放大器区域中的三个，功率部分中的一个），以研究输出激光强度的开关对比度。获得的功率大于1 W CW，斜率效率为0.7 W / A，接近通过关闭输入脊部分中的两个和三个电极，可获得20 dB的对比度。另外，获得了超过50 dB的副模抑制比和60 nm的调谐带宽。发现这些能量是在近衍射极限光束中发出的！9
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