High power near diffraction limited external cavity semiconductor tapered lasers that use a single-angled-facet input preamplifier are demonstrated for the first time. Four electrodes (three in the preamplifier region and one in the power section) on the device were implemented to investigate the switching contrast ratio of the output laser intensity. More than 1 W CW of power was obtained with a slope efficiency of 0.7 W/A, and close to 20 dB intensity contrast ratio was obtained by switching off two and three electrodes in the input ridge section. Also, more than 50 dB side-mode suppression ratio and 60 nm tuning bandwidth were obtained. These powers were found to be emitted in a near-diffraction- limited beam.
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