Zinc Oxide Thin Films Grown by RF Magnetron Sputtering on Nanostructure Al Thin Layer/Glass and Glass Substrates

摘要

ZnO films with random and highly (002)-preferred orientation were deposited on nanostructured Al (n-Al) /glass and glass substrates at room temperature by RF magnetron sputtering method,respectively. According to I (002)/I (100) ~I annealed (002)/I annealed (100) -1.1 (on n-Al) and 21 annealed (002)/I (002) (on n-Al) - I annealed (002)/I(002) (on glass) -3.1,the rough n-Al surface is suitable for the growth of a-axis orientation,and the appearance of the (100) peak plays a major role in decreasing the c-axis orientation. The average optical transmission of the film on n-Al layer increased significantly afier annealing. At the same time,the growth mode and E 8 of ZnO films were discussed. On n-Al layer/glass substrate. it is not easy for the growth interface to form the smooth surface during the deposition process and Stranski Krstanov plays a primary role on the deposition of the films. Due to the significant increase of the interplanar spacing d (101),the band gaps for as-grown and annealed films grown on n-Al decreased,comparing with that of the film deposited on glass substrate.