DETERMINATION OF SILICON FILM DOPING CONCENTRATION AND BACK INTERFACE OXIDE CHARGE DENSITY USING SOI-MOS CAPACITOR

摘要

This work presents a new method to determine the silicon film doping concentration (N_(df)) and the oxide charge density at silicon film/buried oxide (back) interface (Q_(0x2)) using the high frequency Capacitance versus Voltage (C-V) curve of Silicon-On-Insulator (SOI) capacitors. Front channel capacitance as a function of the front and back gate voltage are used to determine the front threshold voltage (V_(thF,acc2) and the back gate voltage when the back interface reaches accumulation (V_(GB,acc2)). The V_(thF,acc2) and V_(GB,acc2) are used to calculate the N_(df) and Q_(0x2) MEDICI simulations are performed to validate the proposed method. The sensitivity of the proposed methods is also evaluated.