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Large and composition-dependent band gap bowing in In_xGa_(1-x)N alloys

机译:In_xGa_(1-x)N合金中的大且依赖于成分的带隙弯曲

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We present theoretical and experimental results for the band gap of In_xGa_(1-x)N alloys, showing significantly larger bowing than has been commonly assumed. We highlight the importance of properly including strain in the experimental analysis. Using X-ray diffraction (XRD) and Rutherford backscattering spectrometry the layers in our study were determined to be pseudomor-phically strained. The In content determined by XRD depends strongly on the assumptions made about the strain in the InGaN layers. Strain also affects the band structure and hence the transition energies measured by optical-transmission spectroscopy. An analysis of the experimental results produces a bowing parameter b approx approx 3.8 eV at x=0.1. First-principles calculations, based on pseudopotential-density-functional theory, produce values of the bowing parameter in agreement with the experimental determination, and also indicate a strong dependence of the bowing parameter on composition.
机译:我们介绍了In_xGa_(1-x)N合金的带隙的理论和实验结果,表明弯曲度比通常假定的要大得多。我们强调在实验分析中适当包含应变的重要性。使用X射线衍射(XRD)和卢瑟福背散射光谱法,我们研究中的层被确定为伪形态应变。由XRD确定的In含量在很大程度上取决于关于InGaN层中的应变的假设。应变还影响能带结构,并因此影响通过光透射光谱法测量的跃迁能。实验结果的分析在x = 0.1时产生的弯曲参数b约为3.8 eV。基于伪电位密度泛函理论的第一性原理计算得出的弯曲参数值与实验确定值一致,并且还表明弯曲参数对成分的强烈依赖性。

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