A CMOS A/D converter on laser recrystallized SOI with controlling the crystal growth direction

摘要

There have been so much progress for 3-D ICs and CMOS-ICs by using the laser re crystallized silicon on insulating (SOI) structure however the analog circuit has not been achieved so far. This was mainly because electrical characteristics of conventional MOS-FETs/SOI were not satisfactorily uniform or well-matched with requirements of analog ICs. Main reasons for these problems were in a crystal quality of the SOI film which still contained some crystalline defects and also in the peculiar characteristics of the n-channel MOS-FET/SOI, which was the ¿¿¿kink effect¿¿¿ caused by its floating body.