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Creation and motion of edge dislocations in copper single crystals

机译:铜单晶中边缘位错的产生和运动

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摘要

Dislocations were created near the center of the surface (110) of copper small crystals whose surfaces are (111), (111), (110), (110), (112), and (112) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created. As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface. Just before the creation of a partial dislocation the stress was the highest. For larger crystals, forming a step on (11) plane was not enough and a shear was necessary to move dislocations.
机译:通过使用n体原子在表面为(111),(111),(110),(110),(112)和(112)的铜小晶体的表面(110)的中心附近产生了位错势和分子动力学。首先,创建了Heidenreich-Shockley部分脱位。随着部分位错的进行,部分位错和表面与堆积断层相连,直到在表面上产生下一个Heidenreich-Shockley部分位错。在产生部分位错之前,压力最大。对于较大的晶体,在(11)平面上形成台阶是不够的,并且需要剪切才能移动位错。

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